Electronic Energies in Delta Doped AlGaAs/GaAs Heterostuctures

Calculation of electronic properties in AlxGa1-x delta-doped systems

The calculation of the electronic energy levels of n-type d-doped quantum wells in a AlGaAs matrix is presented. Many-body effects in the two-dimensional electron gas are taken into account by using a local-density Thomas-Fermi approach. Special consideration is taken into when the values of the Al molar fraction xR0.45, and the ternary alloy becomes an indirect gap material. The results sugges...

Electron mobility in Si delta doped GaAs

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy

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Electronic structure of realistically extended atomistically resolved disordered Si:P delta-doped layers

Electronic properties of doped fullerenes

The most abundant fullerene molecule, C60, has just the right combination of size, chemical stability, and activity to serve as the building block for a large variety of solids with fascinating properties. After a short overview of the related carbon compounds, first the structures of the C60 molecule and the pure crystalline C60 are summarized. Experimental and theoretical works on the vibrati...